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Large Size Few-Layer Ambipolar MoS2 Metal-Oxide-Semiconductor Field Effect Transistors by Nitrogen Plasma Doping

Authors :
Wen Zhao Wang
Yu Qian Liu
Xiang Bin Zeng
Source :
Key Engineering Materials. 938:89-94
Publication Year :
2022
Publisher :
Trans Tech Publications, Ltd., 2022.

Abstract

Molybdenum disulfide (MoS2), a typical two-dimensional layered semiconductor material, is widely studied due its excellent electronic properties in atomic scale. In this study, we achieved the growth of large size few-layer MoS2 films by using molybdenum boat with vertical shield at the end to carry MoO3 precursor in the chemical vapor deposition (CVD) system. The optical microscopy reveals the morphology and lateral size of as-grown films. The Raman spectrum testified that the synthesized films are few-layer MoS2 with defects. Metal-oxide-semiconductor field effect transistors (MOSFETs) based on CVD-grown MoS2 are fabricated, presenting n-type transportation with ION/IOFF ratio about 103. The transportation behaviour of MoS2 MOSFETs is changed from n-type to ambipolar by introducing nitrogen plasma into MoS2 films. The electron or hole transportation in MoS2 is controlled by gate-source voltage. The ambipolar MOSFETs show ION/IOFF ratio about 103.

Details

ISSN :
16629795
Volume :
938
Database :
OpenAIRE
Journal :
Key Engineering Materials
Accession number :
edsair.doi...........fd595b6cc597df40326399a7eec1ee6e