Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling

The authors developed a cellular based Monte Carlo (MC) feature scale model capable of direct coupling to the dominant plasma species ratios from a reactor scale model in order to simulate the profile evolution of shallow trench isolation etch in chlorine-based plasmas and its variation from the center to the edge of the wafer. Carefully planned experiments along with scanning electron microscopy (SEM) were used to calibrate the MC model, where one to two plasma parameters were systematically varied. Simulated feature profiles were found to agree well with experimental observations, capturing details such as microtrenching, faceting, tapering, and bowing. The particle counts used to achieve these fits agreed well with those estimated from SEM, corroborating the chemistry and physics used in the feature scale model. In addition, the feature scale model uses a novel surface representation that eliminates the artificial flux fluctuations originating from the discrete cells used in the simulation and enables a much more precise calculation of the surface normal, which dictates the trajectory of reflected species.