Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p- and n-doping layers

The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAs∕AlGaAs quantum-wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110K. The lowest threshold current was 2.1mA at 100K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.