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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Authors :
Brendan P. Gunning
Francis J. Kub
Leonard J. Brillson
James C. Gallagher
Mona A. Ebrish
Travis J. Anderson
G. M. Foster
Andrew D. Koehler
Karl D. Hobart
Brenton A. Noesges
Source :
Applied Physics Letters. 117:082103
Publication Year :
2020
Publisher :
AIP Publishing, 2020.

Abstract

Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. A treatment was developed to recover both the ideality factor and leakage current, which uses UV/O3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced VN defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the VN defect.

Details

ISSN :
10773118 and 00036951
Volume :
117
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........fe953746ad3517a902797de6a71aa129
Full Text :
https://doi.org/10.1063/5.0021153