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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
- Source :
- Applied Physics Letters. 117:082103
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. A treatment was developed to recover both the ideality factor and leakage current, which uses UV/O3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced VN defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the VN defect.
- Subjects :
- 010302 applied physics
Materials science
Plasma etching
Physics and Astronomy (miscellaneous)
business.industry
fungi
technology, industry, and agriculture
chemistry.chemical_element
Cathodoluminescence
Gallium nitride
macromolecular substances
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Nitrogen
chemistry.chemical_compound
chemistry
Vacancy defect
0103 physical sciences
Optoelectronics
Nanometre
0210 nano-technology
business
Diode
Leakage (electronics)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........fe953746ad3517a902797de6a71aa129
- Full Text :
- https://doi.org/10.1063/5.0021153