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A 1.8V 1Gb NAND flash memory with 0.12μm STI process technology
- Source :
- 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- A 1.8 V 1 Gb flash memory uses a 0.12 /spl mu/m STI process technology. A charge pump operates at
Details
- Database :
- OpenAIRE
- Journal :
- 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
- Accession number :
- edsair.doi...........fe9f294a7f3f405620cf4a7535382337
- Full Text :
- https://doi.org/10.1109/isscc.2002.992121