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A 1.8V 1Gb NAND flash memory with 0.12μm STI process technology

Authors :
Dong-Hyuk Chae
Kyong-Hwa Lee
Kyeong-Han Lee
Jung-Dal Choi
Young-Il Seo
Young-Ho Lim
Heung-Soo Im
Jong-Sik Lee
Kang-Deog Suh
June Lee
Dae-Seok Byeon
Source :
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
Publication Year :
2005
Publisher :
IEEE, 2005.

Abstract

A 1.8 V 1 Gb flash memory uses a 0.12 /spl mu/m STI process technology. A charge pump operates at

Details

Database :
OpenAIRE
Journal :
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
Accession number :
edsair.doi...........fe9f294a7f3f405620cf4a7535382337
Full Text :
https://doi.org/10.1109/isscc.2002.992121