A Novel LDMOS with Quadruple RESURF Effect Breaking Silicon Limit

The reduced surface field (RESURF) technique is an effective way to improve the performance of lateral double diffused MOSFET (LDMOS). Thereby, multiple RESURF effect is desired for LDMOS. So far, the LDMOS with triple RESURF effect has been realized and proved to have excellent performance. In this paper, a three-dimensional varying density field plate, which can provide another RESURF effect, is applied on conventional triple RESURF LDMOS. In this way, a LDMOS with quadruple RESURF effect is presented for the first time, which is proved to have 31.2% larger current capability than conventional triple REUSRF LDMOS. Our simulation results show that the performance of the LDMOS with quadruple RESURF effect breaks the silicon limit.