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Resistance switching phenomenon in nano-conduction path formed by dielectric breakdown
- Source :
- 2011 International Meeting for Future of Electron Devices.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- Huge magnetoresistance switching phenomenon, whose MR ratio exceeded 300%, was observed in a nano-conduction path (NCP). The ferromagnetic NCP was formed by the use of dielectric breakdown of insulator (SiO 2 ) concomitant with an introduction of ferromagnetic atoms into NCP by electromigration.
- Subjects :
- Condensed Matter::Materials Science
Materials science
Ferromagnetism
Magnetoresistance
Condensed matter physics
Dielectric strength
Nano
Nanowire
Condensed Matter::Strongly Correlated Electrons
Insulator (electricity)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Thermal conduction
Electromigration
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2011 International Meeting for Future of Electron Devices
- Accession number :
- edsair.doi...........ff477087595b7a7c5d578e49b5fd694b
- Full Text :
- https://doi.org/10.1109/imfedk.2011.5944864