An integrated SiC CMOS gate driver

In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented. The gate driver is designed in a 15V, 1.2 µm silicon carbide CMOS process, and simulated from 25 °C to 300 µC. The gate drivers are packaged and tested over a wide temperature range. Measured peak output current exceeds the 4 A source, 8 A sink current design goals at room temperature. The measured gate driver rise and fall times are 74.2 ns and 36.8 ns, respectively, while driving a SiC power MOSFET at a package temperature above 500 µC. Switching operation is demonstrated while at temperature.