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Forming-free resistive switching characteristics of manganese oxide and cerium oxide bilayers with crossbar array structure

Authors :
Tae Su Kang
Tae Sung Lee
Jaewan Kim
Nam Joo Lee
Tae-Sik Yoon
Mi Ra Park
Chi Jung Kang
Quanli Hu
Haider Abbas
Source :
Japanese Journal of Applied Physics. 57:086501
Publication Year :
2018
Publisher :
IOP Publishing, 2018.

Abstract

The fabrication of a manganese oxide and cerium oxide bilayer structure with a 5 × 5 crossbar array was demonstrated. The resistive switching characteristics of Ag/MnO/CeO2/Pt devices were investigated. The devices showed stable forming-free bipolar resistive switching properties with high resistance ratio (>105–6). Resistive switching phenomena were ascribed to the formation and rupture of oxygen-deficient conductive filaments. The mechanisms of ohmic and Schottky conductions were investigated to determine the resistance switching mechanism.

Details

ISSN :
13474065 and 00214922
Volume :
57
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........ffc8a5366aad0e87c3bf2a5cdcd33425
Full Text :
https://doi.org/10.7567/jjap.57.086501