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Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process
- Source :
- Materials, Volume 8, Issue 4, Pages 1704-1713, Materials, Vol 8, Iss 4, Pp 1704-1713 (2015)
- Publication Year :
- 2015
- Publisher :
- Multidisciplinary Digital Publishing Institute, 2015.
-
Abstract
- This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.
- Subjects :
- Materials science
Passivation
Oxide
lcsh:Technology
Article
law.invention
chemistry.chemical_compound
Teflon
law
SiO2
Electronic engineering
General Materials Science
lcsh:Microscopy
passivation layer
Deposition (law)
lcsh:QC120-168.85
thin film transistors (TFTs)
lcsh:QH201-278.5
business.industry
lcsh:T
Bilayer
Transistor
Amorphous solid
chemistry
lcsh:TA1-2040
Optoelectronics
indium gallium zinc oxide (IGZO)
lcsh:Descriptive and experimental mechanics
lcsh:Electrical engineering. Electronics. Nuclear engineering
Photomask
business
lcsh:Engineering (General). Civil engineering (General)
Layer (electronics)
lcsh:TK1-9971
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Database :
- OpenAIRE
- Journal :
- Materials
- Accession number :
- edsair.doi.dedup.....035af4b888320f7233d9b0e8f0144417
- Full Text :
- https://doi.org/10.3390/ma8041704