Cite
Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors
MLA
D. Pucicki. “Inhomogeneous GaInNAs Quantum Wells: Their Properties and Utilization for Improving of p-i-n and p-n Junction Photodetectors.” Materials Science-Poland, vol. 35, Dec. 2017, pp. 893–902. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....040b485564bb6a1b140aa2cdd4568152&authtype=sso&custid=ns315887.
APA
D. Pucicki. (2017). Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors. Materials Science-Poland, 35, 893–902.
Chicago
D. Pucicki. 2017. “Inhomogeneous GaInNAs Quantum Wells: Their Properties and Utilization for Improving of p-i-n and p-n Junction Photodetectors.” Materials Science-Poland 35 (December): 893–902. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....040b485564bb6a1b140aa2cdd4568152&authtype=sso&custid=ns315887.