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High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

Authors :
Sébastien Pecqueur
Ramzi Bourguiga
David Guerin
Kamal Lmimouni
Khaoula Ferchichi
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN)
Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Faculté des Sciences de Bizerte [Université de Carthage]
Université de Carthage - University of Carthage
Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN)
This research work has been partially undertaken with the support of IEMN fabrication (CMNF) and characterization (PCMP) facilities. We thank the French National Nanofabrication Network RENATECH, and the IEMN cleanroom staff for their support. We also thank CENTEXBEL for the release paper supply.
PCMP PCP
Renatech Network
CMNF
ANR-17-CE24-0013,CONTEXT,Textiles connectés pour les communications autour du corps humain(2017)
Source :
Electronic Materials, Vol 2, Iss 30, Pp 445-453 (2021), Electronic Materials, Electronic Materials, 2021, 2 (4), pp.445-453. ⟨10.3390/electronicmat2040030⟩, Volume 2, Issue 4, Pages 30-453
Publication Year :
2021
Publisher :
MDPI AG, 2021.

Abstract

International audience; In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM and Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V.

Details

Language :
English
ISSN :
26733978
Volume :
2
Issue :
30
Database :
OpenAIRE
Journal :
Electronic Materials
Accession number :
edsair.doi.dedup.....041df5bc0d39fe99c9ae17ad3d1b93a2