Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001)

Authors :: Yifan Wang
Yongqing Huang
Jun Wang
Qi Wang
Xiaoyi Li
Zhigang Jia
Shiwei Cai
Can Deng
Yingce Yan
Xiaomin Ren
Source :: Scopus-Elsevier
Publication Year :: 2013
Publisher :: OSA, 2013.
Abstract: The epitaxy of GaAs/Si(001) has been carried out via inserting different buffer layers and different SLSs by MOCVD. High quality epilayers were obtained by AlAs buffer layer and GaAs0.85P0.15/GaAs SLS.

Subjects :: Materials science
business.industry
Superlattice
Chemical vapor deposition
Epitaxy
Buffer (optical fiber)
Gallium arsenide
chemistry.chemical_compound
chemistry
X-ray crystallography
Optoelectronics
Metalorganic vapour phase epitaxy
business
Layer (electronics)

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