Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

MLA

Michel Pons, et al. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging. Jan. 2003. EBSCOhost, https://doi.org/10.4028/www.scientific.net/MSF.433-436.265⟩.

APA

Michel Pons, Michel Mermoux, Roland Madar, Jean-Marie Bluet, M Anikin, Etienne Pernot, Didier Chaussende, & I. El Harrouni. (2003). Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging. https://doi.org/10.4028/www.scientific.net/MSF.433-436.265⟩

Chicago

Michel Pons, Michel Mermoux, Roland Madar, Jean-Marie Bluet, M Anikin, Etienne Pernot, Didier Chaussende, and I. El Harrouni. 2003. “Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging,” January. doi:10.4028/www.scientific.net/MSF.433-436.265⟩.