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Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si
- Source :
- Applied Physics Letters. 95:241102
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- We fabricate high efficiency GaAs/AlGaAs quantum nanostructure active layer for intersubband detectors and light emitting devices on a silicon substrate. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature
- Subjects :
- Fabrication
Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
chemistry.chemical_element
Substrate (electronics)
Epitaxy
quantum nanostructure
dropet epitaxy, III-V semiconductors
Active layer
Gallium arsenide
chemistry.chemical_compound
Nanolithography
chemistry
Quantum dot
Optoelectronics
business
FIS/03 - FISICA DELLA MATERIA
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 95
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....08156b7bc43ec7d864dbbcd8a5a97264
- Full Text :
- https://doi.org/10.1063/1.3273860