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Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation
- Source :
- IEEE Transactions on Nuclear Science, IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩, IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1694-1700. ⟨10.1109/TNS.2021.3068044⟩
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- International audience; The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.
- Subjects :
- MJSC
PL
Nuclear and High Energy Physics
Materials science
Electron
Nitride
dilute nitrides
01 natural sciences
[SPI.MAT]Engineering Sciences [physics]/Materials
Gallium arsenide
law.invention
Degradation
chemistry.chemical_compound
EQE
law
0103 physical sciences
Solar cell
Electron beam processing
Irradiation
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical and Electronic Engineering
Photocurrent
DLTS
irradiation
010308 nuclear & particles physics
business.industry
electrons
solar cell
Nuclear Energy and Engineering
chemistry
InGaAsN
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
Degradation (geology)
business
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi.dedup.....0983f759c6fe5f21468903baf0bb40d9