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Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection

Authors :
Giorgio Di Natale
Olivier Potin
Marie-Lise Flottes
Bruno Rouzeyre
Jean-Max Dutertre
Rodrigo Possamai Bastos
Département Systèmes et Architectures Sécurisés (SAS-ENSMSE)
École des Mines de Saint-Étienne (Mines Saint-Étienne MSE)
Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC
Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)
Conception et Test de Systèmes MICroélectroniques (SysMIC)
Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)
TEST (TEST)
Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Source :
24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF: European Symposium on Reliability of Electron devices, Failure physics and analysis, ESREF: European Symposium on Reliability of Electron devices, Failure physics and analysis, Sep 2013, Arcachon, France. pp.B3c-2 #68, Microelectronics Reliability, Microelectronics Reliability, Elsevier, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9), pp.1320-1324. ⟨10.1016/j.microrel.2013.07.069⟩
Publication Year :
2013
Publisher :
HAL CCSD, 2013.

Abstract

International audience; Bulk Built-In Current Sensors (BBICSs) are able to detect anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. This paper presents a new strategy to design BBICSs with optimal transient-fault detection sensitivity while keeping low both area and power overheads. The approach allows increasing the detection sensitivity by setting an asymmetry in the flipping ability of the sensor's latch. In addition, we introduce a mechanism to tune the delay of the bulk access transistors that improves even more the BBICS detection sensitivity. The proposed design strategy offers a good compromise between fault detection sensitivity and power consumption; moreover it makes feasible the use of several CMOS processes.

Details

Language :
English
ISSN :
00262714
Database :
OpenAIRE
Journal :
24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF: European Symposium on Reliability of Electron devices, Failure physics and analysis, ESREF: European Symposium on Reliability of Electron devices, Failure physics and analysis, Sep 2013, Arcachon, France. pp.B3c-2 #68, Microelectronics Reliability, Microelectronics Reliability, Elsevier, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9), pp.1320-1324. ⟨10.1016/j.microrel.2013.07.069⟩
Accession number :
edsair.doi.dedup.....0adb62973c61bc72dc98ef397c20041f
Full Text :
https://doi.org/10.1016/j.microrel.2013.07.069⟩