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Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy
- Source :
- Solid State Communications, Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩, Solid State Communications, Elsevier, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩
- Publication Year :
- 2001
- Publisher :
- Elsevier BV, 2001.
-
Abstract
- We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.
- Subjects :
- Photoluminescence
Exciton
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Nitride
Epitaxy
01 natural sciences
7. Clean energy
0103 physical sciences
Materials Chemistry
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
010306 general physics
Quantum well
time-resolved optical spectroscopies
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
PACS 78.55.Cr
78.66.Fd
78.40.Fy
business.industry
Chemistry
epitaxy
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
REFLECTANCE
quantum wells
EMISSION-SPECTRA
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
PHOTOLUMINESCENCE
Time-resolved spectroscopy
0210 nano-technology
business
Indium
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00381098
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi.dedup.....0af1be103bd91b6e9598732b35fd8837
- Full Text :
- https://doi.org/10.1016/s0038-1098(00)00475-0