Forward and reverse characteristics of irradiated MOSFETs

Authors :: G.-F. Dalla Betta
Giovanni Verzellesi
Pierluigi Bellutti
Alessandro Paccagnella
Giovanni Soncini
M. Ceschia
P.G. Fuochi
Source :: Scopus-Elsevier
Publication Year :: 1995
Publisher :: IEEE, 1995.
Abstract: pMOSFETs biased with V/sub gs/

Subjects :: Nuclear and High Energy Physics
Materials science
Condensed matter physics
Subthreshold conduction
business.industry
Charge density
Semiconductor device
Threshold voltage
MOSFET
radiation effects
Nuclear Energy and Engineering
Gate oxide
Optoelectronics
Field-effect transistor
Irradiation
Electrical and Electronic Engineering
business

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