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Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality
- Source :
- Digital.CSIC. Repositorio Institucional del CSIC, instname
- Publisher :
- ROYAL SOC CHEMISTRY
-
Abstract
- Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, e.g. via the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that Zn3P2 nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100). We detect the presence of two stable rotated crystal domains that coexist in the structure. They are due to a change in the growth facet, which originates either from the island formation and merging in the initial stages of growth or lateral overgrowth. These domains have been visualized through 3D atomic models and confirmed with image simulations of the atomic scale electron micrographs. Density functional theory simulations describe the rotated domains' formation mechanism and demonstrate their lattice-matched epitaxial relation. In addition, the energies of the shallow states predicted closely agree with transition energies observed by experimental studies and offer a potential origin for these defect transitions. Our study represents an important step forward in the understanding of Zn3P2 and thus for the realisation of solar cells to respond to the present call for sustainable photovoltaic technology.<br />We acknowledge Martin Friedl, Didem Dede, Nicholas Morgan, and Wonjong Kim for helpful discussions regarding selective area growth and the substrate patterning procedures. M. C. S., S. M. S., P. T. V. and J. A. acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa programme from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. M. C. Spadaro has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 754510 (PROBIST) and the Severo Ochoa programme. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. Authors acknowledge the use of instrumentation provided by the National Facility ELECMI ICTS, node “Laboratorio de Microscopías Avanzadas” at University of Zaragoza. S. E. S., E. Z. S., M. Z., R. P., J. B. L. and A. F. i M. were supported by SNSF Consolidator grant BSCGI0-157705 and the Max-Planck-EPFL-Center for Molecular Nanoscience and Technology. N. Y. D. acknowledges the UK Engineering and Physical Sciences Research Council (EPSRC) for funding (Grant No. EP/S001395/1). The DFT calculations were performed using the computational facilities of the Advanced Research Computing @ Cardiff(ARCCA) Division, Cardiff University.
- Subjects :
- Fabrication
Nanostructure
Materials science
Nanowire
strain relaxation
02 engineering and technology
software tool
stem-cell
Epitaxy
01 natural sciences
7. Clean energy
Atomic units
Crystal
Selective area epitaxy
0103 physical sciences
initio molecular-dynamics
gaas
General Materials Science
nanowire solar-cells
010302 applied physics
enhanced absorption
business.industry
021001 nanoscience & nanotechnology
simulation
Optoelectronics
Direct and indirect band gaps
beam epitaxy
0210 nano-technology
business
transitions
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Digital.CSIC. Repositorio Institucional del CSIC, instname
- Accession number :
- edsair.doi.dedup.....0c14f7ad4da374f666a7d01917b162ec