Novel concept for high level overdrive tolerance of GaAs based FETs

A novel FET concept, using low temperature grown GaAs as surface passivation and buffer layer material, has been developed to tolerate high levels of input overdrive and to improve electrostatic discharge (ESD) resistance. It is shown that high input levels 17 dB beyond the 1 dB compression point, do not lead to the burnout of the device and that, at the same time, the ESD failure voltage can be increased compared to conventional GaAs based MESFETs.