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Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots
- Source :
- IEEE electron device letters, 27 (2006): 320–322. doi:10.1109/LED.2006.872841, info:cnr-pdr/source/autori:Tsormpatzoglou A. (a); Tassis D. H.(a); Dimitriadis C. A.(a); Frigeri P.(b); Franchi S.(b); Gombia E.(b); Mosca R.(b)/titolo:Stress-induced local trap levels in Au%2Fn-GaAs Schottky diodes with embedded InAs quantum dots/doi:10.1109%2FLED.2006.872841/rivista:IEEE electron device letters (Print)/anno:2006/pagina_da:320/pagina_a:322/intervallo_pagine:320–322/volume:27
- Publication Year :
- 2006
- Publisher :
- Institute of Electrical and Electronics Engineers, New York, NY , Stati Uniti d'America, 2006.
-
Abstract
- Local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots, generated after a long time of the device operation, have been investigated with low-frequency noise measurements performed in the temperature range of 77-298 K and at the forward current of 30 nA. Whereas the initial devices show a pure 1/f noise behavior, after a long time of operation, recombination noise was observed at frequencies above 100 Hz, in addition to the 1/f noise at lower frequencies. Analysis of the recombination noise data obtained on structures where different GaAs cap layer thicknesses have been removed by etching allowed us to determine the activation energy of the local traps and have a rough estimation of their spatial distribution.
- Subjects :
- Physics
Noise measurement
business.industry
Infrasound
Schottky diode
Schottky diodes
InAs quantum dots (QDs)
traps
Electronic, Optical and Magnetic Materials
Gallium arsenide
chemistry.chemical_compound
chemistry
Etching (microfabrication)
Quantum dot
Optoelectronics
Spontaneous emission
Electrical and Electronic Engineering
business
Noise (radio)
noise spectroscopy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- IEEE electron device letters, 27 (2006): 320–322. doi:10.1109/LED.2006.872841, info:cnr-pdr/source/autori:Tsormpatzoglou A. (a); Tassis D. H.(a); Dimitriadis C. A.(a); Frigeri P.(b); Franchi S.(b); Gombia E.(b); Mosca R.(b)/titolo:Stress-induced local trap levels in Au%2Fn-GaAs Schottky diodes with embedded InAs quantum dots/doi:10.1109%2FLED.2006.872841/rivista:IEEE electron device letters (Print)/anno:2006/pagina_da:320/pagina_a:322/intervallo_pagine:320–322/volume:27
- Accession number :
- edsair.doi.dedup.....0e51f45d5b3c6aa2b9a250d1fec38229
- Full Text :
- https://doi.org/10.1109/LED.2006.872841