Back to Search
Start Over
Superficial Dopants Allow Growth of Silicone Nanofilaments on Hydroxyl-Free Substrates
- Source :
- Langmuir. 30:10308-10316
- Publication Year :
- 2014
- Publisher :
- American Chemical Society (ACS), 2014.
-
Abstract
- We report new types of silicone nanostructures by a gas-phase reaction of trichloromethylsilane: 1-D silicone nanofilaments with a raveled end and silicone nanoteeth. Filaments with a raveled end are obtained on poly(vinyl chloride), which is superficially doped with the detergent Span 20. Silicone nanoteeth grow on sodium chloride using dibutyl phthalate as superficial dopant. Without dopants, no structures are observed. The dopants are identified by mass spectroscopy and the silicone nanostructures are analyzed by infrared spectroscopy and energy-dispersive analysis of X-rays. The growth of silicone nanostructures on a hydrophobic substrate (poly(vinyl chloride)/Span 20) and a substrate free of hydroxyl groups (sodium chloride/dibutyl phthalate) questions the currently discussed mechanisms for the growth of 1-D silicone nanofilaments, which is discussed. We suggest superficial doping as an alternative pretreatment method to oxidizing activation and prove this principle by the successful coating of copper, which is superficially doped with Span 20.
- Subjects :
- 10120 Department of Chemistry
inorganic chemicals
3104 Condensed Matter Physics
Materials science
1607 Spectroscopy
Infrared spectroscopy
1603 Electrochemistry
engineering.material
complex mixtures
Vinyl chloride
chemistry.chemical_compound
Silicone
Coating
540 Chemistry
Oxidizing agent
Electrochemistry
Organic chemistry
General Materials Science
Spectroscopy
Dopant
Doping
technology, industry, and agriculture
Substrate (chemistry)
3110 Surfaces and Interfaces
Surfaces and Interfaces
Condensed Matter Physics
2500 General Materials Science
chemistry
Chemical engineering
engineering
Subjects
Details
- ISSN :
- 15205827 and 07437463
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Langmuir
- Accession number :
- edsair.doi.dedup.....0f3c0b6a94c7f4067b490fbbabb4cb3c