X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD

InGaAsN films grown by MOCVD were examined by X-ray photoelectron spectroscopy (XPS). The success of N atoms incorporation was demonstrated. The existence of two N configurations is observed. In addition, the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga. All these results imply the formation of InN+GaAs configuration in InGaAsN quaternary alloy.