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Spin tunneling random access memory (STram)
- Source :
- IEEE Transactions on Magnetics. 32(5):4022-4024
- Publication Year :
- 1996
- Publisher :
- Institute of Electrical and Electronics Engineers, 1996.
-
Abstract
- A storage mechanism in ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junctions has been found by us. Based on this mechanism, we designed and fabricated a 2/spl times/2 bit Spin Tunneling Random Access Memory (STram). These junctions provide an excellent means of storing a binary data in the hard components, and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component remains unaltered.
- Subjects :
- Physics
Random access memory
Condensed matter physics
Giant magnetoresistance
Spin polarized scanning tunneling microscopy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
Condensed Matter::Superconductivity
Component (UML)
Binary data
Condensed Matter::Strongly Correlated Electrons
Spin tunneling
State (computer science)
Electrical and Electronic Engineering
Quantum tunnelling
Subjects
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 32
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Magnetics
- Accession number :
- edsair.doi.dedup.....0f907f6bcba2fc82307a4897c6af2bd6