A 5GHz-Band On-Chip Matching CMOS MMIC Front-End

Authors :: Ueda, Hiro-omi
Shinjo, Shintaro
Nabeno, Yasuhiro
Ono, Masayoshi
Ohnakado, Takahiro
Murakami, Takaaki
Furukawa, Akihiko
Hashizume, Yasushi
Nishikawa, Kazuyasu
Mori, Takeshi
Yamakawa, Satoshi
Oomori, Tatsuo
Suematsu, Noriharu
Source :: Ueda, Hiro-omi ; Shinjo, Shintaro ; Nabeno, Yasuhiro ; Ono, Masayoshi ; Ohnakado, Takahiro ; Murakami, Takaaki ; Furukawa, Akihiko ; Hashizume, Yasushi ; Nishikawa, Kazuyasu ; Mori, Takeshi ; Yamakawa, Satoshi ; Oomori, Tatsuo ; Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Publication Year :: 2003
Publisher :: Alma Mater Studiorum - Università di Bologna, 2003.
Abstract: A 5GHz--band CMOS MMIC front-end is developed,which includes a two-stage power amplifier (PA)with a single-stage push-pull driver (DRV),a three- stage low noise amplifier (LNA),and a transmit/receive (T/R)switch.The high current on-chip matching spiral inductor is used for the on-chip matching PA.On-chip matching configuration enables these circuits to connect internally.The IC performs 14.8dBm transmit power,and 4.1dB receiver noise figure at 5.2GHz.

Database :: OpenAIRE
Journal :: Ueda, Hiro-omi ; Shinjo, Shintaro ; Nabeno, Yasuhiro ; Ono, Masayoshi ; Ohnakado, Takahiro ; Murakami, Takaaki ; Furukawa, Akihiko ; Hashizume, Yasushi ; Nishikawa, Kazuyasu ; Mori, Takeshi ; Yamakawa, Satoshi ; Oomori, Tatsuo ; Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Accession number :: edsair.doi.dedup.....10d41676dace7d3b28b5f92ce236a802
Full Text :: https://doi.org/10.6092/unibo/amsacta/473