Silicon Photomultipliers Electrical Model Extensive Analytical Analysis

The present work aims to address a comprehensive analytical analysis of a new accurate equivalent electrical model of silicon photomultiplier (SiPM) detectors. The proposed circuit model allows to truthfully reproduce the output signal waveform generated by the light sensors apart from the specific technology adopted for the fabrication process, and can also be profitably exploited to perform reliable circuit-level simulations. A detailed and in-depth investigation of the functional parameters involved in the output pulse signals is here developed, and the most significant physical relationships are analytically derived as well. Experimental measurements are finally carried out on real devices, in order to validate the accuracy of the attained expressions, and good fittings are achieved between the analytical curve plots and the associated measurements results. The adopted analysis turns out to be particularly helpful when designing an optimum front-end architecture for SiPM detectors, since the performance of the entire detection system, especially in terms of dynamic range and timing resolution, can be accurately predicted as a function of the SiPM model parameters and the foremost features of the coupled front-end electronics.