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Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition
- Source :
- Thin solid films, 520 (2012): 4512–4517. doi:10.1016/j.tsf.2011.10.141, info:cnr-pdr/source/autori:Devi A.; Cwik S.; Xu K.; Milanov A.P.; Noei H.; Wang Y.; Barreca D.; Meijer J.; Rogalla D.; Kahn D.; Cross R.; Parala H.; Paul S./titolo:Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition/doi:10.1016%2Fj.tsf.2011.10.141/rivista:Thin solid films (Print)/anno:2012/pagina_da:4512/pagina_a:4517/intervallo_pagine:4512–4517/volume:520
- Publication Year :
- 2011
- Publisher :
- Elsevier, 2011.
-
Abstract
- Thin films of HfGdO x and HfDyO x were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO 2 over a wide temperature window. Film deposition was carried out in the temperature range 300–700 °C in the presence of oxygen on Si(100) substrates. HfGdO x films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdO x in terms of capacitance–voltage and current–voltage characteristics of metal-insulator-semiconductor device structures were evaluated.
- Subjects :
- Morphology
Materials science
Scanning electron microscope
Metals and Alloys
Analytical chemistry
electrical characteristics
Surfaces and Interfaces
Chemical vapor deposition
Combustion chemical vapor deposition
Rutherford backscattering spectrometry
Electrical characteristics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
X-ray photoelectron spectroscopy
composition
MOCVD
morphology
Materials Chemistry
Deposition (phase transition)
Metalorganic vapour phase epitaxy
Thin film
RE-substituted HfO2
Composition
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Thin solid films, 520 (2012): 4512–4517. doi:10.1016/j.tsf.2011.10.141, info:cnr-pdr/source/autori:Devi A.; Cwik S.; Xu K.; Milanov A.P.; Noei H.; Wang Y.; Barreca D.; Meijer J.; Rogalla D.; Kahn D.; Cross R.; Parala H.; Paul S./titolo:Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition/doi:10.1016%2Fj.tsf.2011.10.141/rivista:Thin solid films (Print)/anno:2012/pagina_da:4512/pagina_a:4517/intervallo_pagine:4512–4517/volume:520
- Accession number :
- edsair.doi.dedup.....11fb74f7e427b9c636b6d577b158fbf5