Electrical and optical simulation of perovskite/silicon tandem solar cells using Tcad-Sentaurus

This work focuses on 2D device simulation for perovskite/tandem solar cells, aiming to reproduce the experimental current-voltage curves and to explore further steps for efficiency improvements. The results demonstrate that a reasonable J-V curve can be obtained when the indium tin oxide (ITO) layer that interconnects both subcells is treated as either a semiconductor or conductor. In both cases, band to band tunneling and/or additional built-in voltage governed by proper work functions of ITO and tin oxide (SnOx) films are required to obtain the high experimental FFs of >80%. Optical and electrical losses in the tandem device are also addressed by quantum efficiencies (EQE, IQE) and reflectance simulation.