Erbium energy levels in GaN grown by hydride vapor phase epitaxy

MLA

Jing Li, et al. “Erbium Energy Levels in GaN Grown by Hydride Vapor Phase Epitaxy.” AIP Advances, vol. 10, no. 12, Dec. 2020, p. 125006. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....148eb7ec5a76c8df2b025183208dfa3e&authtype=sso&custid=ns315887.

APA

Jing Li, Yaqion Yan, T. B. Smith, Jingyu Lin, & Hongxing Jiang. (2020). Erbium energy levels in GaN grown by hydride vapor phase epitaxy. AIP Advances, 10(12), 125006.

Chicago

Jing Li, Yaqion Yan, T. B. Smith, Jingyu Lin, and Hongxing Jiang. 2020. “Erbium Energy Levels in GaN Grown by Hydride Vapor Phase Epitaxy.” AIP Advances 10 (12): 125006. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....148eb7ec5a76c8df2b025183208dfa3e&authtype=sso&custid=ns315887.