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Ultrasmall Nanoplatelets: The Ultimate Tuning of Optoelectronic Properties

Authors :
Alberto Vomiero
François Vidal
Kaustubh Basu
F. Rosei
Gianluca Sirigu
Mart Celikin
Dongling Ma
Andrea Camellini
Yufeng Zhou
Xin Tong
Zhiming Wang
Margherita Zavelani-Rossi
Shuhui Sun
Haiguang Zhao
Lei Jin
David Barba
Source :
Advanced energy materials, 7 (2017). doi:10.1002/aenm.201602728, info:cnr-pdr/source/autori:Zhou, Yufeng; Celikin, Mert; Camellini, Andrea; Sirigu, Gianluca; Tong, Xin; Jin, Lei; Basu, Kaustubh; Tong, Xin; Barba, David; Ma, Dongling; Sun, Shuhui; Vidal, Francois; Zavelani-Rossi, Margherita; Wang, Zhiming M.; Zhao, Haiguang; Vomiero, Alberto; Rosei, Federico/titolo:Ultrasmall Nanoplatelets: The Ultimate Tuning of Optoelectronic Properties/doi:10.1002%2Faenm.201602728/rivista:Advanced energy materials (Print)/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:7
Publication Year :
2017
Publisher :
Wiley, 2017.

Abstract

2D semiconducting nanoplatelets (NPLs) are an emerging class of photo-active materials. They can be used as building blocks in optoelectronic devices thanks to their large absorption coefficient, high carrier mobility, and unique thickness-dependent optical transitions. The main drawback of NPLs is their large lateral size, which results in unfavorable band energy levels and low quantum yield (QY). Here, ultrasmall lead chalcogenide PbSe1-xSx NPLs are prepared, which exhibit an unprecedented QY of approximate to 60%, the highest ever reported for this structure. The NPLs are applied as light absorber in a photoelectrochemical system, leading to a saturated photocurrent density of approximate to 5.0 mA cm(-2) (44 mL cm(-2) d(-1)), which is a record for NPL-based photo-electrodes in solar-driven hydrogen generation. Ultrasmall NPLs hold the potential for breakthrough developments in the field of optically active nanomaterials.

Details

ISSN :
16146840 and 16146832
Volume :
7
Database :
OpenAIRE
Journal :
Advanced Energy Materials
Accession number :
edsair.doi.dedup.....155474d559e3f944866317208412fb9e
Full Text :
https://doi.org/10.1002/aenm.201602728