Effect of Interatomic Distance of Constituent Nitrogen Atoms on its Localized Electronic State in Dilute GaAsN Thin Films Investigated by a Photoreflectance Spectroscopy

MLA

Masafumi Yamaguchi, et al. “Effect of Interatomic Distance of Constituent Nitrogen Atoms on Its Localized Electronic State in Dilute GaAsN Thin Films Investigated by a Photoreflectance Spectroscopy.” Energy Procedia, vol. 60, Jan. 2014, pp. 63–70. EBSCOhost, https://doi.org/10.1016/j.egypro.2014.12.343.

APA

Masafumi Yamaguchi, Tetsuo Ikari, Hidetoshi Suzuki, Goshi Morioka, Akio Suzuki, Atsuhiko Fukuyama, & Wen Ding. (2014). Effect of Interatomic Distance of Constituent Nitrogen Atoms on its Localized Electronic State in Dilute GaAsN Thin Films Investigated by a Photoreflectance Spectroscopy. Energy Procedia, 60, 63–70. https://doi.org/10.1016/j.egypro.2014.12.343

Chicago

Masafumi Yamaguchi, Tetsuo Ikari, Hidetoshi Suzuki, Goshi Morioka, Akio Suzuki, Atsuhiko Fukuyama, and Wen Ding. 2014. “Effect of Interatomic Distance of Constituent Nitrogen Atoms on Its Localized Electronic State in Dilute GaAsN Thin Films Investigated by a Photoreflectance Spectroscopy.” Energy Procedia 60 (January): 63–70. doi:10.1016/j.egypro.2014.12.343.