InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications

Authors :: Johann Peter Reithmaier
R. Schwertberger
D. Gold
Alfred Forchel
Source :: Scopus-Elsevier
Publication Year :: 2003
Publisher :: IEEE, 2003.
Abstract: Summary form only given. In this work 1.55 /spl mu/m emitting quantum dash (QDash) lasers were realized by self organized growth of InAs quantum dashes on InGaAlAs surfaces lattice matched to InP. The influence of the number of QDash layers in the active region of a laser on device performances was studied. Device results from broad area as well as from cw operating ridge waveguide (RWG) QDash-lasers are presented and discussed in relation to telecommunication applications.

Subjects :: Materials science
Ridge waveguides
business.industry
Quantum dash lasers
Laser
Gallium arsenide
law.invention
chemistry.chemical_compound
chemistry
Quantum dot laser
law
Optoelectronics
business
Telecommunications
Quantum
Tunable laser
Quantum well

Database :: OpenAIRE
Journal :: The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
Accession number :: edsair.doi.dedup.....1ae0133b2a2b5f17ce3341888d26309b
Full Text :: https://doi.org/10.1109/leos.2002.1133900