Back to Search
Start Over
Bandgap engineering of GaN nanowires
Bandgap engineering of GaN nanowires
- Source :
- AIP Advances, Vol 6, Iss 5, Pp 055018-055018-8 (2016)
- Publication Year :
- 2016
- Publisher :
- AIP Publishing LLC, 2016.
-
Abstract
- Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.
- Subjects :
- 010302 applied physics
Nanostructure
Materials science
business.industry
Band gap
Nanowire
General Physics and Astronomy
Nanotechnology
02 engineering and technology
Tensile strain
Nitride
021001 nanoscience & nanotechnology
01 natural sciences
lcsh:QC1-999
Semiconductor
Surface-area-to-volume ratio
0103 physical sciences
Optoelectronics
Density functional theory
0210 nano-technology
business
lcsh:Physics
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 6
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....1b7be2c505e3329146492069eb82b315