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Bandgap engineering of GaN nanowires

Bandgap engineering of GaN nanowires

Authors :
Ru-Zhi Wang
Li-Chun Xu
ChiYung Yam
Bangming Ming
Woon-Ming Lau
Hui Yan
Source :
AIP Advances, Vol 6, Iss 5, Pp 055018-055018-8 (2016)
Publication Year :
2016
Publisher :
AIP Publishing LLC, 2016.

Abstract

Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

Details

Language :
English
ISSN :
21583226
Volume :
6
Issue :
5
Database :
OpenAIRE
Journal :
AIP Advances
Accession number :
edsair.doi.dedup.....1b7be2c505e3329146492069eb82b315