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Functionalized bismuth films: Giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states

Authors :
Hongbin Zhang
Stefan Blügel
Gustav Bihlmayer
Yuriy Mokrousov
Daniel Wortmann
Chengwang Niu
Source :
Physical review / B 91(4), 041303 (2015). doi:10.1103/PhysRevB.91.041303, ResearcherID
Publication Year :
2015
Publisher :
APS, 2015.

Abstract

The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies both in the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of quantum valley Hall state, thus intrinsically realising the so-called valley-polarized QAH effect. We further investigate the realization of large gap QSH and QAH states in an H-decorated Bi(\={1}10) film and X-decorated (X=F, Cl, Br, and I) Bi(111) films.<br />submitted to Physical Reveiw Letters on 25th of September 2014

Details

Language :
English
Database :
OpenAIRE
Journal :
Physical review / B 91(4), 041303 (2015). doi:10.1103/PhysRevB.91.041303, ResearcherID
Accession number :
edsair.doi.dedup.....1d7f86a1e793aa0beb1d4c9dcba28d4a
Full Text :
https://doi.org/10.1103/PhysRevB.91.041303