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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Authors :
Christoforos G. Theodorou
F. Balestra
Gerard Ghibaudo
L. Contamin
Mikael Casse
F. Serra di Santa Maria
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )
Université Grenoble Alpes (UGA)
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
balestra, francis
Source :
EUROSOI-ULIS, EUROSOI-ULIS, Sep 2021, Caen, France, HAL, 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560694⟩, Solid-State Electronics, Solid-State Electronics, 2022, pp.108271. ⟨10.1016/j.sse.2022.108271⟩
Publication Year :
2022
Publisher :
Elsevier BV, 2022.

Abstract

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.

Subjects

Subjects :
Materials science
business.industry
Scattering
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Gate length
Silicon on insulator
Limiting
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
MOSFET
Materials Chemistry
Optoelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical and Electronic Engineering
business
ComputingMilieux_MISCELLANEOUS

Details

ISSN :
00381101
Volume :
192
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi.dedup.....1e067397d944d86eb67f7651d6532a85

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