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Blue light absorption enhancement based on vertically channelling modes in nano-holes arrays

Authors :
Pere Roca i Cabarrocas
Christian Seassal
Ségolène Callard
Emmanuel Drouard
Rémy Artinyan
Romain Peretti
Meng Xianqin
Guillaume Gomard
Thierry Deschamps
INL - Nanophotonique (INL - Photonique)
Institut des Nanotechnologies de Lyon (INL)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM)
École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
France Telecom-Orange Labs Contract No. 0050012310-A09221 Program 'Investissements d'Avenir'-launched by the French Government and operated by the National Research Agency (ANR)-for financial support to the LabEx iMUST of Université de Lyon.
Source :
Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2014, 104 (5), pp.051119. ⟨10.1063/1.4864267⟩
Publication Year :
2014
Publisher :
HAL CCSD, 2014.

Abstract

International audience; We investigate the specific optical regime occurring at short wavelengths, in the high absorption regime, in silicon thin-films patterned by periodically arranged nano-holes. Near-field scanning optical microscopy indicates that the incoming light is coupled to vertically channelling modes. Optical modelling and simulations show that the light, travelling inside the low-index regions, is absorbed at the direct vicinity of the nano-holes sidewalls. This channelling regime should be taken into account for light management in optoelectronic devices.

Details

Language :
English
ISSN :
00036951
Database :
OpenAIRE
Journal :
Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2014, 104 (5), pp.051119. ⟨10.1063/1.4864267⟩
Accession number :
edsair.doi.dedup.....1e9c774a95e200107c289e86c751cb98
Full Text :
https://doi.org/10.1063/1.4864267⟩