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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
Nucleation
Stacking
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Dissociation (chemistry)
4016 Materials Engineering
law.invention
QC350
law
0103 physical sciences
Scanning transmission electron microscopy
Partial dislocations
Electron microscope
0210 nano-technology
Layer (electronics)
QC
40 Engineering
Subjects
Details
- ISSN :
- 00218979
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....21576a3e2b4a8dad9ca914b3c655dddb