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Charge-Shift Bonding—A Class of Electron-Pair Bonds That Emerges from Valence Bond Theory and Is Supported by the Electron Localization Function Approach

Authors :
David Danovich
Sason Shaik
Bernard Silvi
David Lauvergnat
Philippe C. Hiberty
Laboratoire de Chimie Physique D'Orsay (LCPO)
Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Source :
Chemistry-A European Journal, Chemistry-A European Journal, Wiley-VCH Verlag, 2005, 11 (21), pp.6358-6371
Publication Year :
2005
Publisher :
Wiley, 2005.

Abstract

This paper deals with a cen- tral paradigm of chemistry, the elec- tron-pair bond. Valence bond (VB) theory and electron-localization func- tion (ELF) calculations of 21 single bonds demonstrate that along the two classical bond families of covalent and ionic bonds, there exists a class of charge-shift bonds (CS bonds) in which the fluctuation of the electron pair den- sity plays a dominant role. In VB theory, CS bonding manifests by way of a large covalent-ionic resonance energy, RECS, and in ELF by a depleted basin population with large variances (fluctuations). CS bonding is shown to be a fundamental mechanism that is necessary to satisfy the equilibrium condition, namely the virial ratio of the kinetic and potential energy contribu- tions to the bond energy. The paper de- fines the atomic propensity and territo- ry for CS bonding: Atoms (fragments) that are prone to CS bonding are com- pact electronegative and/or lone-pair- rich species. As such, the territory of CS bonding transcends considerations of static charge distribution, and in- volves: a) homopolar bonds of heteroa- toms with zero static ionicity, b) heter- opolar s and p bonds of the electro- negative and/or electron-pair-rich ele- ments among themselves and to other atoms (e.g., the higher metalloids, Si, Ge, Sn, etc), c) all hypercoordinate molecules. Several experimental mani- festations of charge-shift bonding are discussed, such as depleted bonding density, the rarity of ionic chemistry of silicon in condensed phases, and the high barriers of halogen-transfer reac- tions as compared to hydrogen-trans- fers.

Details

ISSN :
15213765 and 09476539
Volume :
11
Database :
OpenAIRE
Journal :
Chemistry - A European Journal
Accession number :
edsair.doi.dedup.....232d892d21c84b2980f4d1d86c627f13