Cite
Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001)
MLA
L. Di Gaspare, et al. Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001). Jan. 2000. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....28404b9aa5a4b55398219da40ebbabf8&authtype=sso&custid=ns315887.
APA
L. Di Gaspare, Giovanni Capellini, Florestano Evangelisti, & Elia Palange. (2000). Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001).
Chicago
L. Di Gaspare, Giovanni Capellini, Florestano Evangelisti, and Elia Palange. 2000. “Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001),” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....28404b9aa5a4b55398219da40ebbabf8&authtype=sso&custid=ns315887.