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10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
- Source :
- 2019 14th European Microwave Integrated Circuits Conference (EuMIC).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50μm gate width HEMTs fabricated with a 0.I5μm gate length on 70μm thick SiC substrate.
- Subjects :
- Materials science
business.industry
Amplifier
020208 electrical & electronic engineering
Bandwidth (signal processing)
Gate length
020206 networking & telecommunications
Gallium nitride
02 engineering and technology
High-electron-mobility transistor
chemistry.chemical_compound
chemistry
Sic substrate
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Ka band
business
Monolithic microwave integrated circuit
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 14th European Microwave Integrated Circuits Conference (EuMIC)
- Accession number :
- edsair.doi.dedup.....28f3010523f0e0e8ec8c5bd2489bf741