Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors

Authors :: Melucci M.
Zambianchi M.
Favaretto L.
Gazzano M.
Zanelli A.
Monari
Capelli R.
Troisi S.
Toffanin S.
Muccini M.
M. Melucci
M. Zambianchi
L. Favaretto
M. Gazzano
A. Zanelli
M. Monari
R. Capelli
S. Troisi
S. Toffanin
M. Muccini
Source :: Chemical communications (Lond., 1996, Print) 47 (2011): 11840–11842. doi:10.1039/c1cc14179a, info:cnr-pdr/source/autori:Melucci M., Zambianchi M., Favaretto L., Gazzano M., Zanelli A., Monari, M., Capelli R., Troisi S., Toffanin S., Muccini M./titolo:Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for Thin Film-and Light Emitting Transistors/doi:10.1039%2Fc1cc14179a/rivista:Chemical communications (Lond., 1996, Print)/anno:2011/pagina_da:11840/pagina_a:11842/intervallo_pagine:11840–11842/volume:47
Publication Year :: 2011
Publisher :: Royal Society of Chemistry (RSC), 2011.
Abstract: The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.

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