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Monolayer Single-Crystal 1T′-MoTe2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect

Authors :
Andrew M. Rappe
William M. Parkin
A. T. Charlie Johnson
Marija Drndic
Yu Ren Zhou
Youngkuk Kim
James M. Kikkawa
Robert W. Carpick
Carl H. Naylor
Zhaoli Gao
Frank Streller
Jinglei Ping
Source :
Nano Letters. 16:4297-4304
Publication Year :
2016
Publisher :
American Chemical Society (ACS), 2016.

Abstract

Growth of transition metal dichalcogenide (TMD) monolayers is of interest due to their unique electrical and optical properties. Films in the 2H and 1T phases have been widely studied but monolayers of some 1T'-TMDs are predicted to be large-gap quantum spin Hall insulators, suitable for innovative transistor structures that can be switched via a topological phase transition rather than conventional carrier depletion [ Qian et al. Science 2014 , 346 , 1344 - 1347 ]. Here we detail a reproducible method for chemical vapor deposition of monolayer, single-crystal flakes of 1T'-MoTe2. Atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm the composition and structure of MoTe2 flakes. Variable temperature magnetotransport shows weak antilocalization at low temperatures, an effect seen in topological insulators and evidence of strong spin-orbit coupling. Our approach provides a pathway to systematic investigation of monolayer, single-crystal 1T'-MoTe2 and implementation in next-generation nanoelectronic devices.

Details

ISSN :
15306992 and 15306984
Volume :
16
Database :
OpenAIRE
Journal :
Nano Letters
Accession number :
edsair.doi.dedup.....29db3403e3ebd92c5f0f629cbb855901
Full Text :
https://doi.org/10.1021/acs.nanolett.6b01342