Stability of GeTe-based phase change material stack under thermal stress: reaction with Ti studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography

Authors :: Marion Descoins
Dominique Mangelinck
Magali Putero
Carine Perrin-Pellegrino
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP)
Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Source :: 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp.71-73. ⟨10.1109/IITC-MAM.2015.7325629⟩
Publication Year :: 2015
Publisher :: HAL CCSD, 2015.
Abstract: In situ sheet resistance and x-ray diffraction measurements were used simultaneously during heat treatment to study Ti electrodes in contact with Ge-Te phase change materials. Ti is found to react with GeTe forming TiTe 2 and Ge. Atom probe tomography analyses confirm the presence of these two phases after a 400°C heat treatment.

Language :: English
Database :: OpenAIRE
Journal :: 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp.71-73. ⟨10.1109/IITC-MAM.2015.7325629⟩
Accession number :: edsair.doi.dedup.....2a5324355300c657a181b89d96b4fa1b
Full Text :: https://doi.org/10.1109/IITC-MAM.2015.7325629⟩

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