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Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water

Authors :
Sylwia Gieraltowska
Lukasz Wachnicki
Piotr Dluzewski
Bartlomiej S. Witkowski
Marek Godlewski
Elzbieta Guziewicz
Source :
Materials; Volume 16; Issue 11; Pages: 4077
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2–1.6 Å. At low temperatures (≤100 °C), the films grew faster and are structurally more disordered, amorphous and/or polycrystalline with crystal sizes up to 29 nm, compared to the films grown at higher temperatures. At high temperatures of 240 °C, the films are better crystallized with crystal sizes of 38–40 nm but grew slower. GPC, dielectric constant, and crystalline structure are improved by depositing at temperatures above 300 °C. The dielectric constant value and the roughness of the films have been determined for monoclinic HfO2, a mixture of orthorhombic and monoclinic, as well as for amorphous HfO2. Moreover, the present study shows that the increase in the dielectric constant of the films can be achieved by using ammonia water as an oxygen precursor in the ALD growth. The detailed investigations of the relationship between HfO2 properties and growth parameters presented here have not been reported so far, and the possibilities of fine-tuning and controlling the structure and performance of these layers are still being sought.

Details

ISSN :
19961944
Volume :
16
Database :
OpenAIRE
Journal :
Materials
Accession number :
edsair.doi.dedup.....2b2fa863623b5ef2df7f825a8a0e6d82
Full Text :
https://doi.org/10.3390/ma16114077