Superconductive junctions with trappinglayers for the detection of X-rays

Addition of a trapping layer to an SIS junction improves its performance as an X-ray detector. In this article X-ray induced pulse height and decay time spectra will be presented as a function of bias voltage. These measurements are in good agreement with a description based on the time constants for trapping, excitation and tunneling calculated by means of a model for proximity layers developed by Golubov et al..1,2The interpretation of the data doesn't require an initial fast loss process for the created quasi-particles as discussed by Van Vechten.