Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots

Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K. RI Pitanti, Alessandro/K-5547-2012