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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells

Authors :
Marie Jubault
Wei-Chao Chen
Lars Riekehr
Marika Edoff
Negar Naghavi
Jan Keller
Julie Goffard
Louis Gouillart
Andrea Cattoni
Stéphane Collin
Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF)
École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP)
Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social]
Centre de Nanosciences et de Nanotechnologies (C2N)
Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Uppsala University
Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
EDF R&D (EDF R&D)
EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP)
Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)
This work was supported by the ARCIGS-M Project, as part of the European Union’s Horizon 2020 Research and Innovation Program under Grant 720887.
Source :
IEEE Journal of Photovoltaics, IEEE Journal of Photovoltaics, IEEE, 2020, 10 (1), pp.250-254. ⟨10.1109/JPHOTOV.2019.2945196⟩
Publication Year :
2020
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2020.

Abstract

International audience; We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).

Details

ISSN :
21563403 and 21563381
Volume :
10
Database :
OpenAIRE
Journal :
IEEE Journal of Photovoltaics
Accession number :
edsair.doi.dedup.....2ed66a36703f04ee9e9d05092fa50a90
Full Text :
https://doi.org/10.1109/jphotov.2019.2945196