Numerical analysis of Si and GaAs solar cells exposed to space radiation

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina