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Investigations on the physical origin of lateral photovoltage in PbS-colloidal quantum dot/Si heterojunctions
- Source :
- IndraStra Global.
- Publication Year :
- 2016
- Publisher :
- IOP PUBLISHING LTD, 2016.
-
Abstract
- Restricted area heterojunctions, an array of lead sulfide colloidal quantum dots (PbS-CQDs) and crystalline silicon, are studied with a non-destructive remote contact light beam induced current (RC-LBIC) technique. As well as getting good quality active area images we observed an anomalous unipolar signal response for the PbS-CQD/n-Si devices and a conventionally expected bipolar signal profile for the PbS-CQD/p-Si devices. Interestingly, our simulation results consistently yielded a unipolar and bipolar nature in the signals related to the PbS-CQD/n-Si and PbS-CQD/p-Si heterostructures, respectively. In order to explain the physical mechanism involved in the unipolar signal response of the PbS-CQD/n-Si devices, we propose a model based on the band alignment in the heterojunctions, in addition to the distribution of photo-induced excess majority carriers across the junction. Given that the RC-LBIC technique is well suited to this context, the presence of these two distinct mechanisms (the bipolar and unipolar nature of the signals) needs to be considered in order to have a better interpretation of the data in the characterization of an array of homo/heterojunctions.
- Subjects :
- 010302 applied physics
Materials science
Acoustics and Ultrasonics
business.industry
Physics
Heterojunction
Context (language use)
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Bipolar signal
chemistry.chemical_compound
Quality (physics)
chemistry
Quantum dot
0103 physical sciences
Optoelectronics
Light beam
Lead sulfide
Crystalline silicon
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 23813652
- Database :
- OpenAIRE
- Journal :
- IndraStra Global
- Accession number :
- edsair.doi.dedup.....2ff0ca78eff71198755e91af8242d168